(China (Mainland))
Product Summary
The 2SD1624 is a PNP/NPN epitaxial planar silicon transistor.
Parametrics
Absolute maximum ratings: (1)collector to base voltage: 60 V; (2)collector to emitter voltage: 50 V; (3)emitter to base voltage: 6 V; (4)collector current: 3 A; (5)collector current (pulse): 6 A; (6)collector dissipation: 500 mW; (7)junction temperature: 150℃; (8)storage temperature: -55 to +150℃.
Features
Features: (1)adoption of FBIT, MBIT processes; (2)low collector-to-emitter saturation voltage; (3)fast switching speed; (4)large current capacity and wide ASO.
Diagrams
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 2SD1624 |
Other |
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Data Sheet |
Negotiable |
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2SD1624S-TD-E |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 3A 50V |
Data Sheet |
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2SD1624T-TD-H |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 3A 50V |
Data Sheet |
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2SD1624S-TD-H |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 3A 50V |
Data Sheet |
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2SD1624T-TD-E |
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TRANS NPN BIPOLAR PCP |
Data Sheet |
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